X-ray system, semiconductor package, and tray having X-ray absorption filter

ABSTRACT

An X-ray source is disposed and a detector is disposed adjacent to the X-ray source. A test specimen holder is disposed between the X-ray source and the detector. A filter is disposed between the X-ray source and the test specimen holder. The filter has a plate-shaped semiconductor, a granular semiconductor, or a combination thereof.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.15/635,188, filed Jun. 27, 2017, which is a continuation of U.S. patentapplication Ser. No. 14/455,858, filed on Aug. 8, 2014, which claimspriority under 35 U.S.C. § 119 to Korean Patent Application No.10-2013-0123584 filed on Oct. 16, 2013, the disclosure of which ishereby incorporated by reference in its entirety.

BACKGROUND 1. Technical Field

Embodiments of the inventive concept relate to an X-ray system, asemiconductor package, and a tray having an X-ray absorption filter.

2. Description of Related Art

A technique of testing a semiconductor package and a set board havingthe semiconductor package using an X-ray system is being studied.

v

SUMMARY

Embodiments of the inventive concept provide an X-ray system capable ofreducing degradation of a semiconductor device and obtaining a clearimage.

Another embodiment of the inventive concept provides a semiconductorpackage capable of reducing degradation of the semiconductor device dueto X-rays.

Still another embodiment of the inventive concept provides a tray for asemiconductor device capable of reducing degradation of semiconductordevice due to X-rays.

The technical objectives of the inventive concept are not limited to theabove disclosure, and other objectives may become apparent to those ofordinary skill in the art based on the following descriptions.

Embodiments of the inventive concept provide an X-ray system. The X-raysystem includes an X-ray source and a detector adjacent to the X-raysource. A test specimen holder is disposed between the X-ray source andthe detector. A filter is disposed between the X-ray source and the testspecimen holder. The filter includes a plate-shaped semiconductor, agranular semiconductor, or a combination thereof.

In another embodiment, the filter may include Si, Ge, GaAs, InP, InGaAs,InGaAsP, or a combination thereof.

In still another embodiment, the plate-shaped semiconductor may includea semiconductor wafer.

In yet another embodiment, the test specimen holder may serve to load asemiconductor package. The filter may include the same or substantiallythe same material as a semiconductor substrate in the semiconductorpackage.

In yet another embodiment, the filter may have a greater thickness thanthat of the semiconductor substrate in the semiconductor package.

In yet another embodiment, the filter may be formed in the semiconductorpackage. The filter may be disposed between the X-ray source and thesemiconductor substrate.

In yet another embodiment, a tray may be disposed on the semiconductorpackage. The tray may be disposed between the X-ray source and thesemiconductor package. The filter may be formed in the tray or on thesurface of the tray.

In yet another embodiment, the filter may include a metal filterincluding Zn, Fe, Al, Cu, Ni, Zr, Mo, Mn, V, or a combination thereof.The metal filter is formed on one surface of the plate-shapedsemiconductor.

Embodiments of the inventive concept provide a semiconductor package.The semiconductor package includes a semiconductor filter adjacent tothe semiconductor chip.

In another embodiment, the semiconductor filter may have the same orsubstantially the same material as a semiconductor substrate in thesemiconductor chip.

In still another embodiment, a semiconductor oxide film configured tocover the surface of the semiconductor filter may be disposed.

In yet another embodiment, an encapsulant configured to cover thesemiconductor chip may be formed. The semiconductor filter may include agranular semiconductor. The granular semiconductor may be included inthe encapsulant.

In yet another embodiment, a package substrate may be attached to thesemiconductor chip. The semiconductor filter may include a plate-shapedsemiconductor. The plate-shaped semiconductor may be formed in thepackage substrate or on the surface of the package substrate.

In yet another embodiment, the plate-shaped semiconductor may be formedbetween the package substrate and the semiconductor chip.

In yet another embodiment, a through electrode electrically connected tothe package substrate and the semiconductor chip passing through theplate-shaped semiconductor may be formed.

In yet another embodiment, an underfill layer or an adhesive film may beformed between the package substrate and the semiconductor chip. Thesemiconductor filter may include a granular semiconductor. The granularsemiconductor may be included in the underfill layer or the adhesivefilm.

In yet another embodiment, a coating film configured to cover thesemiconductor chip may be formed. The granular semiconductor may beincluded in the coating film.

Furthermore, embodiments of the inventive concept provide a tray. Thetray includes a plurality of cavities on which a semiconductor packageis seated. Sidewalls configured to separate the cavities from each otherare provided. A lower plate exposed on the bottom of the cavities isprovided. A semiconductor filter is disposed adjacent to the cavities.

In another embodiment, the semiconductor filter may include the same orsubstantially the same material as a semiconductor substrate in thesemiconductor package.

In still another embodiment, the semiconductor filter includes aplate-shaped semiconductor, a granular semiconductor, or a combinationthereof.

In yet another embodiment, the granular semiconductor is included in thelower plate.

In yet another embodiment, the granular semiconductor may be attachedonto the surface of the lower plate.

In yet another embodiment, the plate-shaped semiconductor may beattached to the surface of the lower plate.

In yet another embodiment, the plate-shaped semiconductor is insertedinto the lower plate.

Details of other embodiments are included in the detailed descriptionand drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other features and advantages of the inventiveconcepts will be apparent from the more particular description ofpreferred embodiments of the inventive concepts, as illustrated in theaccompanying drawings in which like reference characters refer to thesame or substantially the same parts throughout the different views. Thedrawings are not necessarily to scale, emphasis instead being placedupon illustrating the principles of the inventive concepts. In thedrawings:

FIGS. 1 to 3 are schematic configuration views illustrating an X-raysystem in accordance with embodiments of the inventive concept;

FIG. 4 is a perspective view illustrating a filter in accordance withembodiments of the inventive concept;

FIG. 5 is an exploded perspective view of FIG. 4;

FIG. 6 is a perspective view illustrating a filter in accordance withembodiments of the inventive concept;

FIG. 7 is an exploded perspective view of FIG. 6;

FIG. 8 is a perspective view illustrating a filter in accordance withembodiments of the inventive concept;

FIGS. 9 and 10 are cross-sectional views of FIG. 8;

FIG. 11 is a graph showing an absorption coefficient of silicon;

FIGS. 12 and 13 are graphs showing X-ray intensity versus wavelength;

FIG. 14 is a cross-sectional view illustrating a semiconductor packagein accordance with embodiments of the inventive concept;

FIGS. 15 and 16 are cross-sectional views illustrating a granular filterin accordance with embodiments of the inventive concept;

FIGS. 17 to 29 are cross-sectional views illustrating a semiconductorpackage in accordance with embodiments of the inventive concept;

FIG. 30 is a perspective view illustrating a tray in accordance withembodiments of the inventive concept;

FIG. 31 is an exploded perspective view of FIG. 30; and

FIGS. 32 to 40 are cross-sectional views illustrating a tray withpackages inserted in accordance with some embodiments of the inventiveconcept.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Various embodiments will now be described more fully with reference tothe accompanying drawings in which some embodiments are shown. Theseinventive concepts may, however, be embodied in different forms andshould not be construed as limited to the embodiments set forth herein.Rather, these embodiments are provided so that this disclosure isthorough and complete and fully conveys the inventive concept to thoseskilled in the art. In the drawings, the sizes and relative sizes oflayers and regions may be exaggerated for clarity.

It will be understood that when an element or layer is referred to asbeing “on,” “connected to” or “coupled to” another element or layer, itcan be directly on, connected or coupled to the other element or layeror intervening elements or layers may be present. In contrast, when anelement is referred to as being “directly on,” “directly connected to”or “directly coupled to” another element or layer, there are nointervening elements or layers present. Like numerals refer to likeelements throughout. As used herein, the term “and/or” includes any andall combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, third,etc. may be used herein to describe various elements, components,regions, layers and/or sections, these elements, components, regions,layers and/or sections should not be limited by these terms. These termsare only used to distinguish one element, component, region, layer orsection from another region, layer or section. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of the present inventive concept.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the figures. It will be understood thatthe spatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device may be otherwise oriented (rotated 90degrees or at other orientations) and the spatially relative descriptorsused herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the presentinventive concept. As used herein, the singular forms “a,” “an” and“the” are intended to include the plural forms as well, unless thecontext clearly indicates otherwise. It will be further understood thatthe terms “comprises” and/or “comprising,” when used in thisspecification, specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof.

Embodiments are described herein with reference to cross-sectionalillustrations that are schematic illustrations of idealized embodiments(and intermediate structures). As such, variations from the shapes ofthe illustrations as a result, for example, of manufacturing techniquesand/or tolerances, are to be expected. Thus, embodiments should not beconstrued as limited to the particular shapes of regions illustratedherein but are to include deviations in shapes that result, for example,from manufacturing. For example, an implanted region illustrated as arectangle will, typically, have rounded or curved features and/or agradient of implant concentration at its edges rather than a binarychange from implanted to non-implanted region. Likewise, a buried regionformed by implantation may result in some implantation in the regionbetween the buried region and the surface through which the implantationtakes place. Thus, the regions illustrated in the figures are schematicin nature and their shapes are not intended to illustrate the actualshape of a region of a device and are not intended to limit the scope ofthe present inventive concept.

Terms such as “front side” and “back side” may be used in a relativesense herein to facilitate easy understanding of the inventive concept.Accordingly, “front side” and “back side” may not refer to any specificdirection, location, or component, and may be used interchangeably. Forexample, “front side” may be interpreted as “back side” and vice versa.Also, “front side” may be expressed as “first side,” and “back side” maybe expressed as “second side,” and vice versa. However, “front side” and“back side” cannot be used interchangeably in the same embodiment.

The term “near” is intended to mean that one among two or morecomponents is located within relatively close proximity of a certainother component. For example, it should be understood that when a firstend is near a first side, the first end may be closer to the first sidethan a second end, or the first end may be closer to the first side thanto a second side.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this inventive concept belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

FIGS. 1 to 3 are schematic views of exemplary configurations of an X-raysystem in accordance with some embodiments of the inventive concepts.The X-ray system according to some embodiments of the inventive conceptmay be a device for testing a semiconductor package or a set boardhaving the semiconductor package.

Referring to FIG. 1, a detector 15 may be disposed adjacent to an X-raysource, for example, an X-ray tube 12. A test specimen holder 14 may bedisposed between the X-ray tube 12 and the detector 15. A filter 22 maybe disposed between the X-ray tube 12 and the test specimen holder 14.The X-ray tube 12 and the detector 15 may be connected to a controller16. A display 17 may be connected to the detector 15 through thecontroller 16. A semiconductor package 31 may be loaded onto the testspecimen holder 14.

In some embodiments, instead of the X-ray tube 12 shown in FIG. 1, othertypes of X-ray sources/generators are used to implement the concepts ofthe present disclosure.

The semiconductor package 31 may include a package substrate 32, asemiconductor chip 35, and an encapsulant 39. The semiconductor chip 35may include a semiconductor substrate 33 having an active region 34thereon. Although a plurality of active and/or passive devices andinsulating layers may be formed in the active region 34, but thedetailed description thereof will be omitted for the sake of brevity.The test specimen holder 14 may be a device which can move thesemiconductor package 31 to the left, right, up, or down, and/or rotatethe semiconductor package 31. The test specimen holder 14 may be a partof a transportation device, such as a belt conveyer.

In some embodiment, the encapsulant 39 may be formed of a conventionalmolding material such as an epoxy molding compound. However, theencapsulant 39 may be other suitable encapsulants, e.g., a ceramiccasing.

The filter 22 may include the same or substantially the same material asthe semiconductor substrate 33. The filter 22 may include Si, Ge, GaAs,InP, InGaAs, InGaAsP, or a combination thereof. For example, thesemiconductor substrate 33 may be a silicon wafer, and the filter 22 mayinclude silicon. The semiconductor substrate 33 may include GaAs, andthe filter 22 may include GaAs. The filter 22 may include a plate-shapedsemiconductor (or semiconductor plate), a granular semiconductor orsemiconductor particles, or a combination thereof. The filter 22 may bereferred to as a semiconductor filter. The filter 22 may have a greaterthickness than the semiconductor substrate 33.

In another embodiment, the filter 22 may further include a metal filterincluding Zn, Fe, Al, Cu, Ni, Zr, Mo, Mn, V, or a combination thereof.

X-rays radiated from the X-ray tube 12 may sequentially pass through thefilter 22 and the semiconductor package 31, and the detector 15 maydetect the X-rays. The display 17 may display an image converted from asignal detected in the detector 15. The X-rays radiated from the X-raytube 12 may show various wavelengths and intensity. The X-rays radiatedfrom the X-ray tube 12 may include a first wavelength region required toobtain an image, and a second wavelength region absorbed into thesemiconductor substrate 33 and degrades characteristics of thesemiconductor chip 35.

For example, the X-rays radiated from the X-ray tube 12 may have awavelength of about 0.01 nm to about 100 nm. The X-rays radiated fromthe X-ray tube 12 may include a hard X-ray showing a wavelength of about0.01 nm to about 10 nm and an intensity of about 12 KeV to about 120KeV, a soft X-ray having a wavelength of about 10 nm to about 100 nm andan intensity of about 0.1 KeV to about 12 KeV. The hard X-ray maycorrespond to the first wavelength region, and the soft X-ray maycorrespond to the second wavelength region. The hard X-ray may be usedfor obtaining an image, and the soft X-ray may be absorbed into thesemiconductor substrate 33, and cause various failures, such asdegradation of refresh characteristics or a charge loss in thesemiconductor chip 35.

The semiconductor filter 22 may transmit X-rays in the first wavelengthregion required to obtain an image, and absorb and/or shield X-rays inthe second wavelength region which degrade the characteristics of thesemiconductor chip 35. The filter 22 may transmit the hard X-ray andabsorb the soft X-ray. In other words, the filter 22 may substantiallyprevent the transmission of the soft X-ray.

In still another embodiment, the semiconductor package 31 may include asemiconductor filter formed of the same or substantially the samematerial as the semiconductor substrate 33. The semiconductor filterincluded in the semiconductor package 31 may include a plate-shapedsemiconductor, a granular semiconductor, or a combination thereof. Thesemiconductor filter included in the semiconductor package 31 mayinclude Si, Ge, GaAs, InP, InGaAs, InGaAsP, or a combination thereof.The semiconductor filter included in the semiconductor package 31 maytransmit X-rays in the first wavelength region required to obtain animage, and absorb and/or shield X-rays in the second wavelength regionwhich degrade the characteristics of the semiconductor chip 35. Thesemiconductor filter included in the semiconductor package 31 maytransmit the hard X-ray and absorb the soft X-ray.

Referring to FIG. 2, a first tray 81, a semiconductor package 31, and asecond tray 91 may be loaded onto a test specimen holder 14. Thesemiconductor package 31 may be loaded between the first tray 81 and thesecond tray 91. The second tray 91 may be disposed between an X-ray tube12 and the semiconductor package 31. The first tray 81 and the secondtray 91 may include a semiconductor filter formed of the same orsubstantially the same material as the semiconductor substrate 33 in thesemiconductor package 31. The semiconductor filter included in the firsttray 81 and the second tray 91 may include a plate-shaped semiconductoror a semiconductor object having one or more substantially flatsurfaces, a granular semiconductor, or any combination thereof. Thesemiconductor filter included in the first tray 81 and the second tray91 may include Si, Ge, GaAs, InP, InGaAs, InGaAsP, or a combinationthereof.

The semiconductor filter included in the first tray 81 and the secondtray 91 may transmit X-rays in a first wavelength region required toobtain an image, and absorb and/or shield X-rays in the secondwavelength region which degrade the characteristics of the semiconductorpackage 31. The semiconductor filter included in the first tray 81 andthe second tray 91 may transmit the hard X-ray and absorb the softX-ray.

Referring to FIG. 3, a filter 22 may be disposed between an X-ray tube12 and a test specimen holder 14. A first tray 81, a semiconductorpackage 31, a second tray 91 may be loaded onto the test specimen holder14. The filter 22 may be disposed between the X-ray tube 12 and thesecond tray 91.

The filter 22 may include a semiconductor filter having the same orsubstantially the same material as a semiconductor substrate 33 in thesemiconductor package 31. The semiconductor package 31 may include asemiconductor filter formed of the same or substantially the samematerial as the semiconductor substrate 33 in the semiconductor package31. The first tray 81 and the second tray 91 may include a semiconductorfilter formed of the same or substantially the same material as thesemiconductor substrate in the semiconductor package 31.

FIG. 4 is a perspective view illustrating a filter in accordance withsome embodiments of the inventive concept, and FIG. 5 is an explodedperspective view of FIG. 4.

Referring to FIGS. 4 and 5, a plurality of plate-shaped filters 22A maybe inserted into a filter case 23. Each of the plate-shaped filters 22Amay include a plate-shaped semiconductor. Each of the plate-shapedfilters 22A may include Si, Ge, GaAs, InP, InGaAs, InGaAsP, or acombination thereof. For example, each of the plate-shaped filters maybe a semiconductor wafer. Each of the plate-shaped filters 22A may be asilicon wafer or a silicon on insulator (SOI) wafer.

In another embodiment, one or more plate-shaped filters 22A, forexample, ten plate-shaped filters 22A may be inserted into the filtercase 23.

FIG. 6 is a perspective view illustrating a filter in accordance withsome embodiments of the inventive concepts, and FIG. 7 is an explodedperspective view of FIG. 6.

Referring to FIGS. 6 and 7, a plurality of plate-shaped filters 22A anda metal filter 24 may be inserted into a filter case 23. The metalfilter 24 may include Zn, Fe, Al, Cu, Ni, Zr, Mo, Mn, V, or acombination thereof.

FIG. 8 is a perspective view illustrating a filter in accordance withsome embodiments of the inventive concepts, and FIGS. 9 and 10 arecross-sectional views of FIG. 8.

Referring to FIGS. 8 and 9, a metal filter 24A may be formed on aplate-shaped filter 22B. The plate-shaped filter 22B may be aplate-shaped semiconductor, such as a semiconductor wafer. The metalfilter 24A may be formed on one surface of the plate-shaped filter 22B.The metal filter 24A may be in contact with one surface of theplate-shaped filter 22B. The metal filter 24A may have a smallerthickness than the plate-shaped filter 22B. The plate-shaped filter 22Bmay include Si, Ge, GaAs, InP, InGaAs, InGaAsP, or a combinationthereof. The metal filter 24A may include Zn, Fe, Al, Cu, Ni, Zr, Mo,Mn, V, or a combination thereof.

Referring to FIGS. 8 and 10, an insulating layer 28 (not shown in FIG.8) and a metal filter 24A may be formed on the plate-shaped filter 22B.The insulating layer 28 may be disclosed between the plate-shaped filter22B and the metal filter 24A. The insulating layer 28 may be in contactwith both the plate-shaped filter 22B and the metal filter 24A. Theinsulating layer 28 may be formed of silicon oxide.

FIG. 11 is a graph showing an absorption coefficient of silicon.

Referring to FIG. 11, a curve L41 is a line which indicates anabsorption coefficient of silicon versus wavelength. As shown in thecurve L41, silicon shows a high absorption coefficient at wavelengths of10 nm to 1100 nm.

FIGS. 12 and 13 are graphs showing X-ray intensity on the y-axis versuswavelength on the x-axis.

Referring to FIG. 12, a curve L51 indicates intensity of X-rays radiatedfrom an X-ray tube versus wavelength when a filter is not used. As shownin the curve L51, due to the characteristics of the X-ray tube, X-rayshaving a wavelength of 0.01 nm to 100 nm or more may be radiated.

Referring to FIG. 13, a curve L52 indicates intensity of X-raysirradiated to a sample versus wavelength when a filter is used. As shownin the curve L52, due to the absorption characteristics of a filter, theX-rays having a wavelength greater than 10 nm nm may be removed. TheX-rays having a wavelength of 0.01 nm to 10 nm may be extracted using afilter in accordance with some embodiments of the inventive concepts,and irradiated to a sample.

FIG. 14 is a cross-sectional view of a semiconductor package inaccordance with some embodiments of the inventive concepts, and FIGS. 15and 16 are cross-sectional views of a granular filter in accordance withsome embodiments of the inventive concepts.

Referring to FIG. 14, a semiconductor package 31A may include a packagesubstrate 32, a first semiconductor chip 35, a second semiconductor chip45, and an encapsulant 39. The first semiconductor chip 35 may include afirst semiconductor substrate 33 and a first active region 34 on thefirst semiconductor substrate 33. A plurality of active and/or passivedevices and insulating layers may be formed on the first active region34. The second semiconductor chip 45 may include a second semiconductorsubstrate 43 and a second active region 44 on the second semiconductorsubstrate 43. A plurality of active and/or passive devices andinsulating layers may be formed on the second active region 44. Aplurality of granular filters 22G may be included in the encapsulant 39.

The first semiconductor substrate 33 and the second semiconductorsubstrate 43 may include Si, Ge, GaAs, InP, InGaAs, InGaAsP, or acombination thereof. For example, the first semiconductor substrate 33and the second semiconductor substrate 43 may be a semiconductor wafer,such as a single crystalline silicon wafer or SOI wafer. The secondsemiconductor substrate 43 may be the same or substantially the sametype of semiconductor wafer as the first semiconductor substrate 33, andthe second semiconductor substrate 43 may be a different type ofsemiconductor wafer from the first semiconductor substrate 33.

The encapsulant 39 may cover the first semiconductor chip 35 and thesecond semiconductor chip 45. Each of the granular filters 22G mayinclude a granular semiconductor formed of the same or substantially thesame material as the first semiconductor substrate 33 or the secondsemiconductor substrate 43. For example, the first semiconductorsubstrate 33 and the second semiconductor substrate 43 may be a siliconwafer, and each of the granular filters 22G may include one or moresilicon granules that may include, for instance, a single siliconparticle or multiple silicon particles clustered together. The firstsemiconductor substrate 33 or the second semiconductor substrate 43 mayinclude GaAs, and each of the granular filters 22G may include GaAs. Thegranular filters 22G may be included in the encapsulant 39. The granularfilters 22G and filler (not illustrated) may be included in theencapsulant 39. The granular filters 22G may be included in theencapsulant 39 instead of the filler. The granular filters 22G mayshield X-ray having a wavelength region easily absorbed into the firstsemiconductor substrate 33 and the second semiconductor substrate 43.

The package substrate 32 may be a rigid printed circuit board, aflexible printed circuit board, or a rigid-flexible printed circuitboard. External terminals 36 may be formed on the bottom surface of thepackage substrate 32. The external terminals 36 may be a solder ball, aconductive bump, a conductive tap, a conductive spacer, a lead gridarray (LGA), a pin grid array (PGA), or a combination thereof.

First through electrodes 41 passing through the first semiconductor chip35 may be formed. First internal terminals 37 and a first adhesive film38 may be formed between the first semiconductor chip 35 and the packagesubstrate 32. The first internal terminals 37 may be a solder ball or aconductive bump. The first adhesive film 38 may include an underfilllayer. The first internal terminals 37 may be connected to the firstthrough electrodes 41 and the package substrate 32 through the firstadhesive film 38.

The second semiconductor chip 45 may be mounted on the firstsemiconductor chip 35. Second internal terminals 47 and a secondadhesive film 48 may be formed between the first semiconductor chip 35and the second semiconductor chip 45. The second adhesive film 48 mayinclude a tape-type material film, a liquid-coating-curing materialfilm, or a combination thereof. The second adhesive film 48 may bereferred to as a die attach film (DAF) or non-conductive film (NCF).

The second semiconductor chip 45 may show a different horizontal widthfrom the first semiconductor chip 35. The second semiconductor chip 45may have a smaller horizontal width than the first semiconductor chip35. The second semiconductor chip 45 may be a different type from thefirst semiconductor chip 35. For example, the first semiconductor chip35 may be a logic chip, and the second semiconductor chip 45 may be amemory chip.

Referring to FIG. 15, a granular filter 22G may include a granularsemiconductor. The granular semiconductor may include Si, Ge, GaAs, InP,InGaAs, InGaAsP, or a combination thereof. The granular filter 22G mayhave various shapes, such as a circle, an oval, a polygon, an amoeba, orany combination thereof.

Referring to FIG. 16, a semiconductor oxide film 220 may substantiallysurround a granular filter 22G. For example, the granular filter 22G maybe a silicon grain, and the semiconductor oxide film 220 may be asilicon oxide film. The semiconductor oxide film 220 may be in directcontact with a surface of the granular filter 22G.

FIGS. 17 to 29 are cross-sectional views illustrating a semiconductorpackage in accordance with some embodiments of the inventive concepts.

Referring to FIG. 17, a semiconductor package 31B may include a packagesubstrate 32, a first semiconductor chip 35, a second semiconductor chip45, and an encapsulant 39. First internal terminals 37 and a firstadhesive film 38 may be formed between the first semiconductor chip 35and the package substrate 32. The first adhesive film 38 may include anunderfill layer. The first internal terminals 37 may be connected tofirst through electrodes 41 and the package substrate 32 through thefirst adhesive film 38. A plurality of granular filters 22G may beincluded in the first adhesive film 38. Each of the granular filters 22Gmay include a granular semiconductor formed of the same or substantiallythe same material as a first semiconductor substrate 33 or secondsemiconductor substrate 43. As discussed above, the granularsemiconductor may be one or more silicon granules that may include, forinstance, a single silicon particle or multiple silicon particlesclustered together. At least some of the granular filters 22G may bespaced apart from each other.

Referring to FIG. 18, a semiconductor package 31C may include a packagesubstrate 32, a first semiconductor chip 35, a second semiconductor chip45, and an encapsulant 39. First internal terminals 37 and a firstadhesive film 38 may be formed between the first semiconductor chip 35and the package substrate 32. The first adhesive film 38 may include anunderfill layer. Second internal terminals 47 and a second adhesive film48 may be formed between the first semiconductor chip 35 and the secondsemiconductor chip 45. A plurality of granular filters 22G may beincluded in the second adhesive film 48, the first adhesive film 38, andthe encapsulant 39. Each of the granular filters 22G may include agranular semiconductor formed of the same or substantially the samematerial as a first semiconductor substrate 33 or second semiconductorsubstrate 43.

Referring to FIG. 19, a semiconductor package 31D may include a packagesubstrate 32, a first semiconductor chip 35, a second semiconductor chip45, a first coating film 53, and an encapsulant 39. First internalterminals 37 and a first adhesive film 38 may be formed between thefirst semiconductor chip 35 and the package substrate 32. The firstadhesive film 38 may include an underfill layer. The first coating film53 may cover the first semiconductor chip 35 and the secondsemiconductor chip 45. The first coating film 53 may cover upper andside surfaces of the first semiconductor chip 35 and the secondsemiconductor chip 45. The encapsulant 39 may cover the first coatingfilm 53. A plurality of granular filters 22G may be included in thefirst adhesive film 38 and the first coating film 53. At least some ofthe granular filters 22G may include a granular semiconductor formed thesame or substantially the same material as a first semiconductorsubstrate 33 or second semiconductor substrate 43.

Referring to FIG. 20, a semiconductor package 31E may include a packagesubstrate 32, a first semiconductor chip 35, a second semiconductor chip45, and an encapsulant 39. First internal terminals 37, a first adhesivefilm 38, and a second coating film 54 may be formed between the firstsemiconductor chip 35 and the package substrate 32. The first adhesivefilm 38 may include an underfill layer. The second coating film 54 maybe formed between the first adhesive film 38 and the first semiconductorchip 35. The second coating film 54 may be in contact with the firstadhesive film 38 and the first semiconductor chip 35.

Second internal terminals 47 and a second adhesive film 48, and a thirdcoating film 55 may be formed between the first semiconductor chip 35and the second semiconductor chip 45. The third coating film 55 may beformed between the second adhesive film 48 and the second semiconductorchip 45. The third coating film 55 may be in contact with the secondadhesive film 48 and the second semiconductor chip 45. The secondcoating film 54 and the third coating film 55 may include photosensitivepolyimide (PSPI). A plurality of granular filters 22G may be included inthe second coating film 54 and the third coating film 55. At least someof the granular filters 22G may include a granular semiconductor formedof the same or substantially the same material as a first semiconductorsubstrate 33 or second semiconductor substrate 43.

Referring to FIG. 21, a semiconductor package 31F may include a packagesubstrate 32, a plate-shaped filter 22E, a first semiconductor chip 35,a second semiconductor chip 45, and an encapsulant 39. Second throughelectrodes 51 passing through the plate-shaped filter 22E may be formed.The plate-shaped filter 22E may be formed between the package substrate32 and the first semiconductor chip 35. Third internal terminals 57 maybe formed between the plate-shaped filter 22E and the package substrate32. The third internal terminals 57 may include a solder ball or aconductive bump. First internal terminals 37 and a first adhesive film38 may be formed between the first semiconductor chip 35 and theplate-shaped filter 22E.

The plate-shaped filter 22E may include a plate-shaped semiconductorformed of the same or substantially the same material as a firstsemiconductor substrate 33 or second semiconductor substrate 43. Theplate-shaped filter 22E may have a greater thickness than the firstsemiconductor substrate 33 or the second semiconductor substrate 43. Theplate-shaped filter 22E may have a larger horizontal width than thefirst semiconductor substrate 33 and the second semiconductor substrate43.

Referring to FIG. 22, a semiconductor package 31G may include a packagesubstrate 32, a plate-shaped filter 22E, a first semiconductor chip 35,a second semiconductor chip 45, and an encapsulant 39. Second throughelectrodes 51 may be formed to pass through the plate-shaped filter 22E.The plate-shaped filter 22E may be formed between the package substrate32 and the first semiconductor chip 35. Third internal terminals 57 maybe formed between the plate-shaped filter 22E and the package substrate32. The third internal terminals 57 may include a solder ball or aconductive bump. First internal terminals 37 and a first adhesive film38 may be formed between the first semiconductor chip 35 and theplate-shaped filter 22E.

The plate-shaped filter 22E may include a plate-shaped semiconductorformed of the same or substantially the same material as a firstsemiconductor substrate 33 or second semiconductor substrate 43. Aplurality of granular filters 22G may be included in a first adhesivefilm 38, a second adhesive film 48, and the encapsulant 39. Each of thegranular filters 22G may include a granular semiconductor formed of thesame or substantially the same material as the first semiconductorsubstrate 33 or the second semiconductor substrate 43.

Referring to FIG. 23, a semiconductor package 31H may include a packagesubstrate 22S, a first semiconductor chip 35, a second semiconductorchip 45, and an encapsulant 39. The package substrate 22S may include aplate-shaped semiconductor formed of the same or substantially the samematerial as a first semiconductor substrate 33 or second semiconductorsubstrate 43.

Referring to FIG. 24, a semiconductor package 31I may include a packagesubstrate 22S, a first semiconductor chip 35, a second semiconductorchip 45, and an encapsulant 39. The package substrate 22S may include aplate-shaped semiconductor formed of the same or substantially the samematerial as a first semiconductor substrate 33 or second semiconductorsubstrate 43. A plurality of granular filters 22G may be included in thefirst adhesive film 38, a second adhesive film 48, and the encapsulant39. Each of the granular filters 22G may include a plate-shapedsemiconductor formed of the same or substantially the same material asthe first semiconductor substrate 33 or second semiconductor substrate43.

Referring to FIG. 25, a semiconductor package 31J may include a packagesubstrate 32, a third semiconductor chip 65, and an encapsulant 39. Thethird semiconductor chip 65 may include a third semiconductor substrate63 and a third active region 64 on the third semiconductor substrate 63.A plurality of active and/or passive devices and insulating layers maybe formed in the third active region 64. A third adhesive film 61 may beformed between the third semiconductor substrate 63 and the packagesubstrate 32. Fourth internal connectors 67 may be formed between thethird active region 64 and the package substrate 32. The fourth internalconnectors 67 may include a bonding wire, a beam lead, a conductivetape, or a combination thereof.

A fourth coating film 68 may be formed on the third active region 64.The encapsulant 39 may cover the fourth coating film 68. The fourthcoating film 68 may include PSPI. In some embodiments, the fourthcoating film 68 may cover only the top surface of the thirdsemiconductor chip 65. A plurality of granular filters 22G may beincluded in the fourth coating film. Each of the granular filters 22Gmay include a granular semiconductor formed of the same or substantiallythe same material as the third semiconductor substrate 63.

Referring to FIG. 26, a semiconductor package 31K may include a packagesubstrate 32, a third semiconductor chip 65, and an encapsulant 39. Afirst coating film 53 may cover the top and side surfaces of the thirdsemiconductor chip 65. A plurality of granular filters 22G may beincluded in the first coating film 53. Each of the granular filters 22Gmay include a granular semiconductor formed of the same or substantiallythe same material as the third semiconductor substrate 63.

Referring to 27, a semiconductor package 31L may include a packagesubstrate 32, a third semiconductor chip 65, and an encapsulant 39. Athird adhesive film 61 and a fifth coating film 69 may be formed betweenthird semiconductor substrate 63 and the package substrate 32. The fifthcoating film 69 may be disclosed between the third semiconductorsubstrate 63 and the third adhesive film 61. The fifth coating film 69may be in contact with the third semiconductor substrate 63 and thethird adhesive film 61. A fourth coating film 68 may be formed on athird active region 64. The encapsulant 39 may cover the fourth coatingfilm 68. The fourth coating film 68 and the fifth coating film 69 mayinclude PSPI.

A plurality of granular filters 22G may be included in the fourthcoating film and the fifth coating film. Each of the granular filters22G may include a granular semiconductor formed of the same orsubstantially the same material as the third semiconductor substrate 63.

Referring to FIG. 28, a semiconductor package 31M may include a packagesubstrate 32, a third semiconductor chip 65, a fourth semiconductor chip75, and an encapsulant 39. The third semiconductor chip 65 may include athird semiconductor substrate 63 and a third active region 64 on thethird semiconductor substrate 63. A fourth adhesive film 76 may beformed between the third semiconductor substrate 63 and the packagesubstrate 32. The fourth semiconductor chip 75 may include a fourthsemiconductor substrate 73 and a fourth active region 74 on the fourthsemiconductor substrate 73. A fifth adhesive film 77 may be formedbetween the fourth semiconductor substrate 73 and the thirdsemiconductor chip 65. A sixth coating film 78 may be formed on thefourth active region 74.

A plurality of granular filters 22G may be included in the fourthadhesive film 76, the fifth adhesive film 77, and the sixth coating film78. Each of the granular filters 22G may include a granularsemiconductor formed of the same or substantially the same material asthe third semiconductor substrate 63 or the fourth semiconductorsubstrate 73.

Referring to FIG. 29, a semiconductor package 31N may include a packagesubstrate 32, a third semiconductor chip 65, a fourth semiconductor chip75, and an encapsulant 39. A fourth adhesive film 76 may be formedbetween third semiconductor substrate 63 and the package substrate 32. Afifth adhesive film 77 may be formed between a fourth semiconductorsubstrate 73 and the third semiconductor chip 65. A first coating film53 may be formed on the fourth active region 74. The first coating film53 may cover top and side surfaces of the third semiconductor chip 65and the fourth semiconductor chip 75.

A plurality of granular filters 22G may be included in the first coatingfilm 53, the fourth adhesive film 76, the fifth adhesive film 77, andthe encapsulant 39. Each of the granular filters 22G may include agranular semiconductor formed of the same or substantially the samematerial as the third semiconductor substrate 63 or the fourthsemiconductor substrate 73.

FIG. 30 is a perspective view illustrating a tray in accordance withsome embodiments of the inventive concepts, and FIG. 31 is an explodedperspective view of FIG. 30. FIGS. 32 to 38 are cross-sectional views ofa tray in accordance with some embodiments of the inventive concepts.The tray in accordance with some embodiments of the inventive conceptmay serve as a container capable of housing a semiconductor package.

Referring to FIGS. 30 and 31, a second tray 91 may be stacked on a firsttray 81. The first tray 81 may include a first lower plate 83, firstpartition walls 84, and first cavities 85. The second tray 91 mayinclude a second lower plate 93, second partition walls 94, secondcavities 95. A semiconductor package 31 may be stacked between the firsttray 81 and the second tray 91. The semiconductor package 31 may beinserted into the first cavity 85.

The first partition walls 84 may be formed on the first lower plate 83.Side surfaces of the first partition walls 84 may define each of thefirst cavities 85 with upper surfaces of the first lower plate 83. Forexample, the bottom surfaces of the first cavities 85 may be defined bythe upper surface of the first lower plate 83. The second tray 91 mayhave substantially the same or substantially the same configuration asthe first tray 81.

The first tray 81 and the second tray 91 may include a semiconductorfilter. The semiconductor filter may include the same or substantiallythe same material as the material that forms a semiconductor substratein the semiconductor package 31. The semiconductor filter may include aplate-shaped semiconductor, a granular semiconductor, or a combinationthereof.

Referring to FIG. 32, a first tray 81A may include a first lower plate83, first partition walls 84, and first cavities 85. A semiconductorpackage 31 may be inserted into one of the first cavities 85. Aplurality of granular filters 22G may be mixed in or dispersed in thefirst lower plate 83 and the first partition walls 84. Each of thegranular filters 22G may include a granular semiconductor formed of thesame or substantially the same material as a semiconductor substrate inthe semiconductor package 31. The first lower plate 83 may have agreater thickness than a semiconductor substrate in the semiconductorpackage 31.

Referring to FIG. 33, a first tray 81B may include a first lower plate83, first partition walls 84, and first cavities 85. A semiconductorpackage 31 may be inserted into one of the first cavities 85. Aplurality of granular filters 22G may be included in the first lowerplate 83. Each of the granular filters 22G may include a granularsemiconductor formed of the same or substantially the same material as asemiconductor substrate in the semiconductor package 31.

Referring to FIG. 34, a tray 81C may include a first lower plate 83,first partition walls 84, first cavities 85, and a first tray coatingfilm 87. The first tray coating film 87 may cover surfaces of the firstlower plate 83 and the first partition walls 84. The first tray coatingfilm 87 may cover lower and upper surfaces of the first lower plate 83.The first tray coating film 87 may cover the bottom and sidewalls of thefirst cavity 85. A semiconductor package 31 may be inserted into thefirst cavity 85. A plurality of granular filters 22G may be included inthe first tray coating film 87. Each of the granular filters 22G mayinclude a granular semiconductor formed of the same or substantially thesame material as a semiconductor substrate in the semiconductor package31.

Referring to FIG. 35, a first tray 81D may include a first lower plate83, first partition walls 84, first cavities 85, and a second traycoating film 88. The first tray coating film 87 may cover an uppersurface of the first lower plate 83. The first tray coating film 87 maycover the bottom of the first cavity 85. A semiconductor package 31 maybe inserted into the first cavity 85. A plurality of granular filters22G may be included in the first tray coating film 87. Each of thegranular filters 22G may include a granular semiconductor formed of thesame or substantially the same material as a semiconductor substrate inthe semiconductor package 31.

Referring to FIG. 36, a first tray 81E may include a first lower plate83, first partition walls 84, first cavities 85, and a plate-shapedfilter 22P. A semiconductor package 31 may be inserted into one of thefirst cavities 85. The plate-shaped filter 22P may be a plate-shapedsemiconductor formed of the same or substantially the same material as asemiconductor substrate in the semiconductor package 31. Theplate-shaped filter 22P may have a greater thickness than thesemiconductor substrate in the semiconductor package 31. Theplate-shaped filter 22P may be attached to the bottom of the lower plate83.

In another embodiment, as shown in FIG. 37, the plate-shaped filter 22Pmay be attached to an upper surface of the first lower plate 83.

Referring to FIG. 38, a first tray 81F may include a first lower plate83, first partition walls 84, first cavities 85, and a plurality ofplate-shaped filters 22P. A semiconductor package 31 may be insertedinto one of the first cavities 85. The plate-shaped filter 22P mayinclude a plate-shaped semiconductor formed of the same or substantiallythe same material as a semiconductor substrate in the semiconductorpackage 31. The plurality of plate-shaped filter 22Ps may be disposed inthe first lower plate 83.

In another embodiment, as shown in FIG. 39, a single plate-shaped filter22P, instead of multiple plate-shaped filters 22P, may be formed ordisposed in the first lower plate 83.

Referring to FIG. 40, a tray 81G may include a first lower plate 83,first partition walls 84, first cavities 85, and multiple plate-shapedfilters 22P. A semiconductor package 31 may be inserted into one of thefirst cavities 85. The multiple plate-shaped filter 22P may be aplate-shaped semiconductor formed of the same or substantially the samematerial as a semiconductor substrate in the semiconductor package 31.The plate-shaped filter 22P may be inserted into the first lower plate83. A plurality of granular filters 22G may be included in the firstlower plate 83 and the first partition walls 84. Each of the granularfilters 22G may include a granular semiconductor formed of the same orsubstantially the same material as a semiconductor substrate in thesemiconductor package 31.

According to some embodiments of the inventive concepts, an X-raysystem, a semiconductor package, and a tray having a semiconductorfilter can be provided. The semiconductor filter can have the same orsubstantially the same material as a semiconductor substrate in thesemiconductor package. The semiconductor filter can include aplate-shaped semiconductor, a granular semiconductor, or a combinationthereof. The semiconductor filter can transmit X-rays in a firstwavelength region which are required to obtain an image, and absorbX-rays in a second wavelength region which degrade the characteristicsof a semiconductor chip. The X-ray system capable of substantiallyreducing degradation of a semiconductor device and obtaining a clearimage can be implemented. The semiconductor package capable ofsubstantially reducing degradation of the semiconductor device due toX-rays can be implemented. The tray for a semiconductor device capableof preventing degradation of the semiconductor device due to X-rays canbe implemented.

The foregoing is illustrative of embodiments and is not to be construedas limiting thereof. Although a few embodiments have been described,those skilled in the art will readily appreciate that many modificationsare possible in embodiments without materially departing from the novelteachings and advantages. Accordingly, all such modifications areintended to be included within the scope of this inventive concept asdefined in the claims. In the claims, means-plus-function clauses areintended to cover the structures described herein as performing therecited function, and not only structural equivalents but alsoequivalent structures. Therefore, it is to be understood that theforegoing is illustrative of various embodiments and is not to beconstrued as limited to the specific embodiments disclosed, and thatmodifications to the disclosed embodiments, as well as otherembodiments, are intended to be included within the scope of theappended claims.

What is claimed is:
 1. A method for manufacturing a semiconductordevice, comprising: providing a semiconductor package having a packagesubstrate, a semiconductor chip disposed on the package substrate, andan encapsulant covering the semiconductor chip on the package substrate;placing the semiconductor package on a package holder; radiating X-rayshaving wavelengths spanning a wavelength range of about 0.01 nm to about100 nm from a X-ray source onto the semiconductor package through asemiconductor filter, the semiconductor filter configured to transmitX-rays having a wavelength between about 0.01 nm and about 10 nm andsubstantially prevent transmission of X-rays having a wavelength betweenabout 10 nm and 100 nm and including a plate-shaped semiconductor, agranular semiconductor, or a combination thereof; and detecting at leastsome of the X-rays from the semiconductor package, wherein the packageholder comprises a tray having a plurality of cavities each configuredto hold the semiconductor package therein, and the tray includes thesemiconductor filter adjacent to the cavities.
 2. The method of claim 1,wherein the semiconductor filter includes Si, Ge, GaAs, InP, InGaAs,InGaAsP, or a combination thereof.
 3. The method of claim 1, wherein thesemiconductor filter has the same or substantially the same material asthe semiconductor chip.
 4. The method of claim 1, wherein thesemiconductor filter is disposed between the X-ray source and thepackage holder.
 5. The method of claim 1, wherein semiconductor packagefurther includes a semiconductor filter, and wherein the semiconductorpackage is placed on the package holder such that the semiconductorfilter of the semiconductor package is positioned between the X-raysource and the semiconductor chip.
 6. The method of claim 5, wherein thesemiconductor filter of the semiconductor package includes the granularsemiconductor dispersed in the encapsulant.
 7. The method of claim 5,wherein the semiconductor package further comprises an underfill layeror an adhesive film between the package substrate and the semiconductorchip, and the semiconductor filter of the semiconductor package includesthe granular semiconductor dispersed in the underfill layer or theadhesive film.
 8. The method of claim 5, wherein the semiconductorpackage further comprises a coating film covering the semiconductor chipand disposed between the encapsulant and the semiconductor chip, and thesemiconductor filter of the semiconductor package includes the granularsemiconductor dispersed in the coating film.
 9. The method of claim 5,wherein the semiconductor filter of the semiconductor package includesthe plate-shaped semiconductor, and the plate-shaped semiconductor isprovided as the package substrate.
 10. The method of claim 9, whereinthe plate-shaped semiconductor is disposed between the package substrateand the semiconductor chip, and the plate-shaped semiconductor includesa through electrode electrically connected to the package substrate andthe semiconductor chip.
 11. The method of claim 1, wherein thesemiconductor package is removable from the semiconductor filter.
 12. Amethod for manufacturing a semiconductor device, comprising: providing asemiconductor package having a package substrate, and a semiconductorchip disposed on the package substrate; placing the semiconductorpackage on a package holder; radiating X-rays having wavelengthsspanning a wavelength range of about 0.01 nm to about 100 nm from aX-ray source onto the semiconductor package through a semiconductorfilter, the semiconductor filter configured to transmit X-rays having awavelength between about 0.01 nm and about 10 nm and substantiallyprevent transmission of X-rays having a wavelength between about 10 nmand 100 nm and comprising a semiconductor material selected from a groupconsisting of Si, Ge, GaAs, InP, InGaAs, InGaAsP, and a combinationthereof; and detecting at least some of the X-rays from thesemiconductor packages, wherein the package holder comprises a trayhaving a plurality of cavities each configured to hold the semiconductorpackage therein, and the tray includes the semiconductor filter adjacentto the cavities.
 13. The method of claim 12, wherein the semiconductorfilter has the same or substantially the same material as thesemiconductor chip.
 14. The method of claim 12, wherein the placing thesemiconductor package on a package holder comprises placing thesemiconductor package such that the semiconductor filter is positionedbetween the X-ray source and the semiconductor chip.
 15. A method formanufacturing a semiconductor device, comprising: providing asemiconductor package having a package substrate, a semiconductor chipdisposed on the package substrate, and an encapsulant covering thesemiconductor chip on the package substrate; placing the semiconductorpackage on a package holder; radiating X-rays including hard X-rays andsoft X-rays from a X-ray source onto the semiconductor package through asemiconductor filter, the semiconductor filter is configured to transmitthe hard X-rays and substantially prevent transmission of the softX-rays; and detecting at least some of the X-rays from the semiconductorpackage, wherein the package holder comprises a tray having a pluralityof cavities each configured to hold the semiconductor package therein,and the tray includes the semiconductor filter adjacent to the cavities.16. The method of claim 15, wherein the soft X-rays have a wavelength ofabout 10 nm to about 100 nm and wherein the hard X-rays have awavelength of about 0.01 nm to about 10 nm.